IRFR9110TRL

P-channel power MOSFET transistor featuring 100V drain-source voltage (Vdss) and 3.1A continuous drain current (ID). Surface mountable in a TO-252-3 package, it offers a low 1.2 Ohm drain-to-source resistance (Rds On Max). Fast switching speeds are indicated by turn-on delay time of 10ns, turn-off delay time of 15ns, and fall time of 17ns. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C.