
P-channel power MOSFET for general-purpose applications. Features 100V drain-to-source voltage and 3.1A continuous drain current. Offers a low 1.2 ohm drain-to-source resistance. Surface mountable in a TO-252-3 (DPAK) package. RoHS compliant with a maximum power dissipation of 2.5W.
Vishay IRFR9110TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 200pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFR9110TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
