P-channel MOSFET with 100V drain-source voltage and 3.1A continuous drain current. Features 1.2 ohm drain-source on-resistance and 2.5W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a DPAK surface-mount package. Operating temperature range is -55°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR9110TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
1.2R
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
200pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR9110TRPBF Datasheet
Download the complete datasheet for Vishay IRFR9110TRPBF to view detailed technical specifications.
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