Vishay
IRFR9120
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR9120 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5.6A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
390pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9120 Datasheet
Download the complete datasheet for Vishay IRFR9120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.