P-channel power MOSFET with 100V drain-source voltage and 5.6A continuous drain current. Features 600mΩ drain-source on-resistance and 42W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-252 DPAK-3 surface-mount package. Operates from -55°C to 150°C with typical turn-on delay of 9.6ns and fall time of 25ns.
PackageTO-252-3
Current Rating-5.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9120TR technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5.6A
Current Rating
-5.6A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
600mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
390pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
-100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9120TR Datasheet
Download the complete datasheet for Vishay IRFR9120TR to view detailed technical specifications.
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