P-channel power MOSFET featuring 100V drain-source voltage and 5.6A continuous drain current. Offers 0.6 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 42W. This silicon Metal-oxide Semiconductor FET is housed in a TO-252 DPAK-3 surface-mount package, suitable for tape and reel packaging. Operates across a temperature range of -55°C to 150°C with typical turn-on delay of 9.6ns and fall time of 25ns.
PackageTO-252-3
Current Rating-5.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9120TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5.6A
Current Rating
-5.6A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
390pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
-100V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9120TRL Datasheet
Download the complete datasheet for Vishay IRFR9120TRL to view detailed technical specifications.
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