Vishay
IRFR9210
Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR9210 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.9A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
170pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
11ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9210 Datasheet
Download the complete datasheet for Vishay IRFR9210 to view detailed technical specifications.
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