P-channel MOSFET, 200V drain-source voltage, 1.9A continuous drain current, and 3 Ohm drain-source resistance. Features include 8ns turn-on delay, 11ns turn-off delay, and 13ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 25W. Packaged in a TO-252 DPAK surface-mount case, this silicon metal-oxide semiconductor FET is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9210TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.9A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
11ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9210TRL Datasheet
Download the complete datasheet for Vishay IRFR9210TRL to view detailed technical specifications.
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