P-channel MOSFET, 200V drain-source voltage, 1.9A continuous drain current, and 3 Ohm drain-source resistance. Features include 8ns turn-on delay, 11ns turn-off delay, and 13ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 25W. Packaged in a TO-252 DPAK surface-mount case, this silicon metal-oxide semiconductor FET is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9210TRL technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 170pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR9210TRL Datasheet
Download the complete datasheet for Vishay IRFR9210TRL to view detailed technical specifications.
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