P-channel MOSFET, 200V drain-source voltage, 1.9A continuous drain current, and 3 Ohm drain-source on-resistance. Features a 13ns fall time, 11ns turn-off delay, and 8ns turn-on delay. This silicon Metal-oxide Semiconductor FET is housed in a DPAK surface-mount package, with a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C. ROHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFR9210TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | -200V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR9210TRPBF Datasheet
Download the complete datasheet for Vishay IRFR9210TRPBF to view detailed technical specifications.
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