P-channel power MOSFET featuring 250V drain-source voltage and 2.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3-ohm drain-source on-resistance. Designed for surface mounting in a TO-252AA package, it boasts fast switching speeds with turn-on delay of 11ns and fall time of 17ns. Maximum power dissipation is 50W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9214TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 220pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR9214TRLPBF Datasheet
Download the complete datasheet for Vishay IRFR9214TRLPBF to view detailed technical specifications.
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