P-channel power MOSFET, 250V drain-source voltage, 2.7A continuous drain current, and 3 Ohm drain-source on-resistance. Features include a 20V gate-source voltage, 50W power dissipation, and a DPAK surface-mount package. This silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 11ns and fall time of 17ns. Operating temperature range is -55°C to 150°C, with RoHS compliance and tape and reel packaging.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power50W
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Technical Specifications
Vishay IRFR9214TRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
3R
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
220pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFR9214TRPBF Datasheet
Download the complete datasheet for Vishay IRFR9214TRPBF to view detailed technical specifications.
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