P-channel MOSFET featuring 200V drain-source voltage and 3.6A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 1.5 ohm drain-source resistance. Designed for surface mounting in a TO-252AA (DPAK-3) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 42W. Key switching characteristics include an 8.8ns turn-on delay and a 7.3ns turn-off delay.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9220 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 340pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 1.5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFR9220 Datasheet
Download the complete datasheet for Vishay IRFR9220 to view detailed technical specifications.
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