P-channel MOSFET, 200V drain-source breakdown voltage, 3.6A continuous drain current, and 1.5 ohm drain-source on-resistance. This silicon metal-oxide semiconductor field-effect transistor features a TO-252AA (DPAK) surface-mount package, 2.5W power dissipation, and operates from -55°C to 150°C. Key electrical characteristics include a 20V gate-to-source voltage, 340pF input capacitance, 19ns fall time, 7.3ns turn-off delay, and 8.8ns turn-on delay. RoHS compliant and lead-free.
PackageDPAK
Voltage200V
Current14A
Current Rating-3.6A
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Technical Specifications
Vishay IRFR9220PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.6A |
| Current | 14A |
| Current Rating | -3.6A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| Voltage | 200V |
| DC Rated Voltage | -200V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFR9220PBF Datasheet
Download the complete datasheet for Vishay IRFR9220PBF to view detailed technical specifications.
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