P-channel power MOSFET, 400V drain-source voltage, 1.8A continuous drain current, and 7Ω drain-source resistance. Features include 11ns turn-on delay, 24ns fall time, and 25ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-252 DPAK-3 surface-mount package, offering a maximum power dissipation of 50W and operating temperature range of -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFR9310TRL technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.8A
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
400V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
270pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
7R
RoHS Compliant
No
Turn-Off Delay Time
25ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFR9310TRL Datasheet
Download the complete datasheet for Vishay IRFR9310TRL to view detailed technical specifications.
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