N-Channel Power MOSFET, 600V Drain-Source Voltage, 2A Continuous Drain Current, and 4.4 Ohm Drain-Source On-Resistance. Features a DPAK surface mount package with a maximum power dissipation of 2.5W. This silicon Metal-oxide Semiconductor FET offers fast switching with a 10ns turn-on delay and 30ns turn-off delay. Operating temperature range is -55°C to 150°C, with RoHS compliance.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFRC20TRLPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.4R
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.4R
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFRC20TRLPBF Datasheet
Download the complete datasheet for Vishay IRFRC20TRLPBF to view detailed technical specifications.
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