
N-channel power MOSFET with 500V drain-source voltage and 11A continuous drain current. Features 520mΩ drain-to-source resistance and 170W maximum power dissipation. Designed for surface mounting in a D2PAK package, offering fast switching speeds with turn-on delay of 14ns and fall time of 28ns. Operates across a wide temperature range from -55°C to 150°C.
Vishay IRFS11N50ATRL technical specifications.
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