N-Channel Power MOSFET for demanding applications. Features 600V drain-source voltage and 9.2A continuous drain current. Offers a low 0.75ohm drain-source on-resistance. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 170W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 22ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power170W
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Technical Specifications
Vishay IRFS9N60APBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 750mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFS9N60APBF Datasheet
Download the complete datasheet for Vishay IRFS9N60APBF to view detailed technical specifications.
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