N-Channel Power MOSFET featuring 500V drain-source voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.55ohm drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C with a maximum power dissipation of 190W. Key switching characteristics include a 14ns turn-on delay and 32ns turn-off delay.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFSL11N50APBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
550mR
Fall Time
27ns
Gate to Source Voltage (Vgs)
30V
Height
9.65mm
Input Capacitance
1.426nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
550mR
RoHS Compliant
Yes
Turn-Off Delay Time
32ns
Turn-On Delay Time
14ns
Weight
0.084199oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFSL11N50APBF Datasheet
Download the complete datasheet for Vishay IRFSL11N50APBF to view detailed technical specifications.
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