N-Channel Power MOSFET featuring 500V drain-source voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.55ohm drain-source on-resistance. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C with a maximum power dissipation of 190W. Key switching characteristics include a 14ns turn-on delay and 32ns turn-off delay.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFSL11N50APBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 550mR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 1.426nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFSL11N50APBF Datasheet
Download the complete datasheet for Vishay IRFSL11N50APBF to view detailed technical specifications.
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