N-Channel Power MOSFET featuring 600V drain-to-source voltage and 9.2A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 0.75ohm drain-to-source resistance. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 170W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 22ns fall time.
PackageTO-262-3
Current Rating9.2A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFSL9N60A technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
9.2A
Current Rating
9.2A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
600V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.65mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Rds On Max
750mR
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
DC Rated Voltage
600V
Weight
0.084199oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFSL9N60A Datasheet
Download the complete datasheet for Vishay IRFSL9N60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.