N-Channel Power MOSFET featuring 600V drain-to-source voltage and 9.2A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 0.75ohm drain-to-source resistance. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 170W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns turn-on delay and 22ns fall time.
PackageTO-262-3
Current Rating9.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFSL9N60A technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.2A |
| Current Rating | 9.2A |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Rds On Max | 750mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 600V |
| Weight | 0.084199oz |
| Width | 4.83mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFSL9N60A Datasheet
Download the complete datasheet for Vishay IRFSL9N60A to view detailed technical specifications.
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