N-Channel Power MOSFET, 600V Vdss, 9.2A continuous drain current, and 0.75ohm Rds On Max. Features a 4V threshold voltage, 13ns turn-on delay, and 30ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-262-3 package with through-hole mounting. Maximum power dissipation is 170W, with an operating temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFSL9N60APBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
9.2A
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
750mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.65mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
Weight
0.084199oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFSL9N60APBF Datasheet
Download the complete datasheet for Vishay IRFSL9N60APBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.