Vishay
IRFU014
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
PackageTO-251AA
Current Rating7.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU014 technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
7.7A
Current Rating
7.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
300pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU014 Datasheet
Download the complete datasheet for Vishay IRFU014 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.