N-Channel Power MOSFET, 600V Vdss, 1.4A Continuous Drain Current (ID), and 7 Ohm Rds On Max. This silicon, metal-oxide semiconductor FET features a TO-251 IPAK-3 package with through-hole mounting. Key specifications include a 30V Gate to Source Voltage (Vgs), 229pF input capacitance, and a maximum power dissipation of 36W. Operating temperature range is -55°C to 150°C.
PackageTO-251-3
Current Rating1.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU1N60A technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.4A
Current Rating
1.4A
Drain to Source Resistance
7R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
6.22mm
Input Capacitance
229pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
7R
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
9.8ns
DC Rated Voltage
600V
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU1N60A Datasheet
Download the complete datasheet for Vishay IRFU1N60A to view detailed technical specifications.
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