IRFU210

N-Channel Power MOSFET, featuring 200V Drain-to-Source Voltage (Vdss) and 2.6A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 1.5 ohm Drain-to-Source Resistance (Rds On Max). Designed for through-hole mounting in a TO-251 IPAK-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and an 8.9ns fall time.