N-Channel Power MOSFET, featuring 200V Drain-to-Source Voltage (Vdss) and 2.6A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 1.5 ohm Drain-to-Source Resistance (Rds On Max). Designed for through-hole mounting in a TO-251 IPAK-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and an 8.9ns fall time.
PackageTO-251-3
Current Rating2.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU210 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.6A
Current Rating
2.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
8.9ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
1.5R
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU210 Datasheet
Download the complete datasheet for Vishay IRFU210 to view detailed technical specifications.
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