N-Channel Power Field-Effect Transistor, featuring a 250V drain-to-source voltage and 2.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 2-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-251AA package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 7ns turn-on delay and a 7ns fall time.
PackageTO-251AA
Resistance2R
Current Rating2.2A
MountingThrough Hole
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Technical Specifications
Vishay IRFU214 technical specifications.
General
| Package/Case | TO-251AA |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 2.2A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 140pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| Resistance | 2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFU214 Datasheet
Download the complete datasheet for Vishay IRFU214 to view detailed technical specifications.
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