IRFU214

N-Channel Power Field-Effect Transistor, featuring a 250V drain-to-source voltage and 2.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 2-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-251AA package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. Key switching characteristics include a 7ns turn-on delay and a 7ns fall time.