Vishay
IRFU220
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU220 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
4.8A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFU220 Datasheet
Download the complete datasheet for Vishay IRFU220 to view detailed technical specifications.
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