N-channel power MOSFET, TO-251 package, featuring 200V drain-source voltage and 4.8A continuous drain current. Offers 800mΩ maximum drain-source on-resistance and 4V threshold voltage. Designed for general-purpose power applications with a maximum power dissipation of 2.5W. RoHS compliant with a 150°C maximum operating temperature.
PackageTO-251-3
Current Rating4.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU220PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
4.8A
Current Rating
4.8A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
200V
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU220PBF Datasheet
Download the complete datasheet for Vishay IRFU220PBF to view detailed technical specifications.
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