N-channel MOSFET transistor designed for through-hole mounting in a TO-251AA package. Features a maximum drain-source voltage of 400V and a continuous drain current of 1.7A. Offers a low drain-source on-resistance of 3.6 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with a fall time of 11ns and turn-off delay of 21ns.
PackageTO-251AA
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFU310PBF technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
1.7A
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
3.6R
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
170pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3.6R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
7.9ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU310PBF Datasheet
Download the complete datasheet for Vishay IRFU310PBF to view detailed technical specifications.
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