Vishay
IRFU320
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
PackageTO-251AA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU320 technical specifications.
General
| Package/Case | TO-251AA |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.8R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFU320 Datasheet
Download the complete datasheet for Vishay IRFU320 to view detailed technical specifications.
No datasheet is available for this part.