N-channel MOSFET transistor for through-hole mounting. Features a 400V drain-source breakdown voltage and a continuous drain current of 3.1A. Offers a low drain-source on-resistance of 1.8 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in TO-251AA (IPAK) with a maximum power dissipation of 2.5W. RoHS compliant.
PackageTO-251AA
Current Rating3.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU320PBF technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
3.1A
Current Rating
3.1A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1.8R
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
400V
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU320PBF Datasheet
Download the complete datasheet for Vishay IRFU320PBF to view detailed technical specifications.
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