N-Channel Power MOSFET, featuring a 500V drain-source breakdown voltage and 2.4A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 3-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 42W. Designed for through-hole mounting in a TO-251AA (IPAK-3) package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and a 16ns fall time.
PackageTO-251-3
Current Rating2.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU420 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 500V |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFU420 Datasheet
Download the complete datasheet for Vishay IRFU420 to view detailed technical specifications.
No datasheet is available for this part.