Vishay
IRFU420A
Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
PackageTO-251-3
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU420A technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.3A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
13ns
Gate to Source Voltage (Vgs)
30V
Height
6.22mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
8.1ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU420A Datasheet
Download the complete datasheet for Vishay IRFU420A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.