N-Channel Power MOSFET featuring 500V drain-source voltage and 3.3A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 3-ohm drain-to-source resistance and a maximum power dissipation of 83W. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns fall time, 16ns turn-off delay, and 8.1ns turn-on delay, with a nominal gate-source voltage of 4.5V. This component is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU420APBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFU420APBF Datasheet
Download the complete datasheet for Vishay IRFU420APBF to view detailed technical specifications.
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