N-Channel Power MOSFET featuring 500V drain-source voltage and 3.3A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 3-ohm drain-to-source resistance and a maximum power dissipation of 83W. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns fall time, 16ns turn-off delay, and 8.1ns turn-on delay, with a nominal gate-source voltage of 4.5V. This component is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU420APBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.3A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
13ns
Gate to Source Voltage (Vgs)
30V
Height
6.22mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Through Hole
Nominal Vgs
4.5V
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4.5V
Turn-Off Delay Time
16ns
Turn-On Delay Time
8.1ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU420APBF Datasheet
Download the complete datasheet for Vishay IRFU420APBF to view detailed technical specifications.
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