Vishay
IRFU430A
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
PackageTO-251-3
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU430A technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8.7ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFU430A Datasheet
Download the complete datasheet for Vishay IRFU430A to view detailed technical specifications.
No datasheet is available for this part.