N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. This single-element silicon metal-oxide semiconductor FET offers a low 1.7 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 110W. Key switching characteristics include a 16ns fall time and 17ns turn-off delay.
PackageTO-251-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFU430APBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.7R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 110W |
| Rds On Max | 1.7R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8.7ns |
| DC Rated Voltage | 500V |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFU430APBF Datasheet
Download the complete datasheet for Vishay IRFU430APBF to view detailed technical specifications.
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