N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. This single-element silicon metal-oxide semiconductor FET offers a low 1.7 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 110W. Key switching characteristics include a 16ns fall time and 17ns turn-off delay.
PackageTO-251-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFU430APBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.7R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
1.7R
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
6.22mm
Input Capacitance
490pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
110W
Rds On Max
1.7R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4.5V
Turn-Off Delay Time
17ns
Turn-On Delay Time
8.7ns
DC Rated Voltage
500V
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU430APBF Datasheet
Download the complete datasheet for Vishay IRFU430APBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
