Vishay
IRFU9014
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
PackageTO-251AA
Current Rating-5.1A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9014 technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
5.1A
Current Rating
-5.1A
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
60V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
270pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
500mR
RoHS Compliant
No
Turn-Off Delay Time
9.6ns
Turn-On Delay Time
11ns
DC Rated Voltage
-60V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU9014 Datasheet
Download the complete datasheet for Vishay IRFU9014 to view detailed technical specifications.
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