P-channel MOSFET transistor featuring a -60V drain-source breakdown voltage and 5.1A continuous drain current. This through-hole mounted component offers a maximum drain-source on-resistance of 500mR at a nominal gate-source voltage of -4V. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 2.5W and a 270pF input capacitance. The TO-251AA package is RoHS compliant.
PackageTO-251AA
MountingThrough Hole
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFU9014PBF technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
5.1A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
500mR
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
270pF
Lead Free
Lead Free
Lead Length
9.65mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
9.6ns
Turn-On Delay Time
11ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9014PBF Datasheet
Download the complete datasheet for Vishay IRFU9014PBF to view detailed technical specifications.
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