P-channel MOSFET transistor featuring 50V drain-source voltage and 9.9A continuous drain current. This through-hole mounted component offers a low 280mΩ drain-source resistance and operates with a nominal gate-source voltage of -4V. It boasts fast switching characteristics with turn-on delay time of 8.2ns and fall time of 25ns. Encased in a TO-251-3 (IPAK) package, this lead-free and RoHS compliant semiconductor is rated for a maximum power dissipation of 42W and a maximum operating temperature of 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9020PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
9.9A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
50V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
490pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
280mR
RoHS Compliant
Yes
Turn-Off Delay Time
12ns
Turn-On Delay Time
8.2ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9020PBF Datasheet
Download the complete datasheet for Vishay IRFU9020PBF to view detailed technical specifications.
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