P-channel power MOSFET featuring 60V drain-source voltage and 8.8A continuous drain current. Offers 280mΩ drain-source resistance and 42W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-251-3 package for through-hole mounting. Key switching parameters include a 13ns turn-on delay and 29ns fall time.
PackageTO-251-3
Current Rating-8.8A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9024 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
8.8A
Current Rating
-8.8A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
570pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
280mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
DC Rated Voltage
-60V
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU9024 Datasheet
Download the complete datasheet for Vishay IRFU9024 to view detailed technical specifications.
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