Vishay
IRFU9120
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
PackageTO-251AA
Current Rating-5.6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9120 technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
5.6A
Current Rating
-5.6A
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
390pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
600mR
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
-100V
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFU9120 Datasheet
Download the complete datasheet for Vishay IRFU9120 to view detailed technical specifications.
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