P-channel Power MOSFET with 100V drain-source breakdown voltage and 5.6A continuous drain current. Features low 480mR drain-source on-resistance at Vgs=10V, 10V threshold voltage, and 20V maximum gate-source voltage. This TO-251AA packaged transistor offers 42W maximum power dissipation and is suitable for through-hole mounting. Includes fast switching speeds with turn-on delay of 9.6ns and fall time of 31ns. RoHS compliant and lead-free.
PackageTO-251AA
Current Rating-5.6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9120PBF technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
5.6A
Current Rating
-5.6A
Drain to Source Breakdown Voltage
-100V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
600mR
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
390pF
Lead Free
Lead Free
Lead Length
9.65mm
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
-100V
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9120PBF Datasheet
Download the complete datasheet for Vishay IRFU9120PBF to view detailed technical specifications.
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