P-channel power MOSFET featuring 200V drain-source voltage and 1.9A continuous drain current. Offers 3 ohm drain-to-source resistance (Rds On Max) and 170pF input capacitance. Designed for through-hole mounting in a TO-251-3 (IPAK-3) package, with operating temperatures from -55°C to 150°C and a maximum power dissipation of 25W. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 13ns.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9210 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.9A
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
11ns
Turn-On Delay Time
8ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFU9210 Datasheet
Download the complete datasheet for Vishay IRFU9210 to view detailed technical specifications.
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