P-Channel Power MOSFET featuring a 200V Drain-Source Breakdown Voltage and 1.9A Continuous Drain Current. This through-hole component offers a low 3 Ohm Drain-Source On-Resistance and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns turn-on delay and a 13ns fall time, with an input capacitance of 170pF. Packaged in TO-251-3 (IPAK) with a 2.5W power dissipation, this RoHS compliant device is suitable for various power switching applications.
PackageTO-251-3
Current Rating-1.9A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFU9210PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.9A
Current Rating
-1.9A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
170pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
Yes
Turn-Off Delay Time
11ns
Turn-On Delay Time
8ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9210PBF Datasheet
Download the complete datasheet for Vishay IRFU9210PBF to view detailed technical specifications.
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