
P-channel power MOSFET with 200V drain-source voltage and 3.6A continuous drain current. Features 1.5 ohm drain-to-source resistance and 42W maximum power dissipation. Operates from -55°C to 150°C with a gate-source voltage of 20V. Includes fast switching times with turn-on delay of 8.8ns and fall time of 19ns. Packaged in a TO-251AA (IPAK-3) through-hole mount configuration.
Vishay IRFU9220 technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 340pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 1.5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFU9220 to view detailed technical specifications.
No datasheet is available for this part.