P-channel Power MOSFET featuring 200V drain-source voltage and 3.6A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 1.5 Ohms. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 2.5W. Key switching characteristics include a turn-on delay time of 8.8ns and a fall time of 19ns. Packaged in TO-251-3 (IPAK), this RoHS compliant device is supplied in rail/tube packaging.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFU9220PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
1.5R
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1.5R
RoHS Compliant
Yes
Turn-Off Delay Time
7.3ns
Turn-On Delay Time
8.8ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFU9220PBF Datasheet
Download the complete datasheet for Vishay IRFU9220PBF to view detailed technical specifications.
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