N-Channel Power MOSFET, 600V Drain-Source Voltage (Vdss), 2A Continuous Drain Current (ID), and 4.4 Ohm Drain-Source On-Resistance (Rds On). Features include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-251-3 (IPAK-3) package with through-hole mounting. Maximum power dissipation is 42W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFUC20 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
350pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.4R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFUC20 Datasheet
Download the complete datasheet for Vishay IRFUC20 to view detailed technical specifications.
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