N-Channel Power MOSFET, 600V Drain-Source Voltage (Vdss), 2A Continuous Drain Current (ID), and 4.4 Ohm Drain-Source On-Resistance (Rds On). Features include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-251-3 (IPAK-3) package with through-hole mounting. Maximum power dissipation is 42W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFUC20 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 350pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.4R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01164oz |
| Width | 2.39mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFUC20 Datasheet
Download the complete datasheet for Vishay IRFUC20 to view detailed technical specifications.
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