N-channel power MOSFET with 600V drain-source voltage and 2A continuous drain current. Features 4.4 ohm drain-source on-resistance and 2.5W maximum power dissipation. Operates from -55°C to 150°C with a 4V threshold voltage. Packaged in a TO-251AA (IPAK-3) through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 10ns and fall time of 25ns.
PackageTO-251AA
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRFUC20PBF technical specifications.
General
Package/Case
TO-251AA
Continuous Drain Current (ID)
2A
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.4R
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
4.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFUC20PBF Datasheet
Download the complete datasheet for Vishay IRFUC20PBF to view detailed technical specifications.
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