N-Channel Power MOSFET, TO-220AB package, featuring a 60V drain-source breakdown voltage and a continuous drain current of 10A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 200mΩ at a nominal gate-source voltage of 4V. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it is suitable for demanding applications. The component exhibits fast switching characteristics with turn-on delay time of 10ns and fall time of 19ns. This RoHS compliant device is designed for through-hole mounting.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ14PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 43W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFZ14PBF Datasheet
Download the complete datasheet for Vishay IRFZ14PBF to view detailed technical specifications.
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