N-Channel Power MOSFET, TO-220AB package, featuring a 60V drain-source breakdown voltage and a continuous drain current of 10A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 200mΩ at a nominal gate-source voltage of 4V. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it is suitable for demanding applications. The component exhibits fast switching characteristics with turn-on delay time of 10ns and fall time of 19ns. This RoHS compliant device is designed for through-hole mounting.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ14PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
43W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ14PBF Datasheet
Download the complete datasheet for Vishay IRFZ14PBF to view detailed technical specifications.
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