Vishay
IRFZ24SPBF
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ24SPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
17A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
42ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
640pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ24SPBF Datasheet
Download the complete datasheet for Vishay IRFZ24SPBF to view detailed technical specifications.
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