N-channel power MOSFET in a TO-220AB package, featuring a 50V drain-source breakdown voltage and a continuous drain current of 30A. Achieves a low 50mΩ maximum drain-source on-resistance. Operates with a 4V threshold voltage and a 20V maximum gate-source voltage, offering fast switching with turn-on delay of 12ns and fall time of 16ns. Supports through-hole mounting and dissipates up to 75W of power.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power75W
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Technical Specifications
Vishay IRFZ30PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFZ30PBF Datasheet
Download the complete datasheet for Vishay IRFZ30PBF to view detailed technical specifications.
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