N-channel power MOSFET in a TO-220AB package, featuring a 50V drain-source breakdown voltage and a continuous drain current of 30A. Achieves a low 50mΩ maximum drain-source on-resistance. Operates with a 4V threshold voltage and a 20V maximum gate-source voltage, offering fast switching with turn-on delay of 12ns and fall time of 16ns. Supports through-hole mounting and dissipates up to 75W of power.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power75W
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Technical Specifications
Vishay IRFZ30PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
50mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.6nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
75W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
Threshold Voltage
4V
Turn-Off Delay Time
23ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ30PBF Datasheet
Download the complete datasheet for Vishay IRFZ30PBF to view detailed technical specifications.
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