N-channel power MOSFET featuring 60V drain-source voltage and 30A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 50mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include a 13ns turn-on delay and 29ns turn-off delay.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power88W
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Technical Specifications
Vishay IRFZ34PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.2nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFZ34PBF Datasheet
Download the complete datasheet for Vishay IRFZ34PBF to view detailed technical specifications.
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