N-channel power MOSFET featuring 60V drain-source voltage and 30A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 50mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Key switching characteristics include a 13ns turn-on delay and 29ns turn-off delay.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power88W
Quick Jump:
Technical Specifications
Vishay IRFZ34PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
30A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
50mR
Fall Time
52ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.2nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
88W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
29ns
Turn-On Delay Time
13ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ34PBF Datasheet
Download the complete datasheet for Vishay IRFZ34PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
